Disorder- and magnetic field–tuned fermionic superconductor-insulator transition in MoN thin films: Transport and scanning tunneling microscopy

Authors: M. Kuzmiak, M. Kopčík, F. Košuth, V. Vaňo, J. Haniš, T. Samuely, V. Latyshev, O. Onufriienko, V. Komanický, J. Kačmarčík, M. Žemlička, M. Gmitra, P. Szabó, and P. Samuely

Phys. Rev. B 108, 184511 

Abstract: Superconductor-insulator transition (SIT) driven by disorder and transverse magnetic field has been investigated in ultrathin MoN films by means of transport measurements and scanning tunneling microscopy and spectroscopy. Upon decreasing thickness, the homogeneously disordered films show increasing sheet resistance Rs, shift of the superconducting transition Tc to lower temperatures with the 3-nm MoN being the last superconducting film and thinner films already insulating. Fermionic scenario of SIT is evidenced by applicability of the Finkel’stein’s model, by the fact that Tc and the superconducting gap Δ are coupled with a constant ratio, and by the spatial homogeneity of the superconducting and electronic characteristics. The logarithmic anomaly found in the tunneling spectra of the nonsuperconducting films is further enhanced in increased magnetic field due to the Zeeman spin effects driving the system deeper into the insulating state and pointing also to fermionic SIT.

DOI: https://doi.org/10.1103/PhysRevB.108.184511